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| Hardware Documentation Data Sheet HAL 320 Differential Hall-Effect Sensor IC (R) Edition Nov. 25, 2008 DSH000017_002EN HAL320 Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of Micronas. All rights not expressly granted remain reserved by Micronas. Micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. By this publication, Micronas does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively subject to the respective order confirmation. Any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. All operating parameters must be validated for each customer application by customers technical experts. Any new issue of this document invalidates previous issues. Micronas reserves the right to review this document and to make changes to the documents content at any time without obligation to notify any person or entity of such revision or changes. For further advice please contact us directly. Do not use our products in life-supporting systems, aviation and aerospace applications! Unless explicitly agreed to otherwise in writing between the parties, Micronas products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted without the express written consent of Micronas. Micronas Trademarks - HAL Micronas Patents DATA SHEET Choppered Offset Compensation protected by Micronas patents no. US5260614A, US5406202A, EP052523B1, and EP0548391B1. Third-Party Trademarks All other brand and product names or company names may be trademarks of their respective companies. 2 Micronas DATA SHEET HAL320 Contents Page 4 4 4 4 5 5 5 6 7 7 12 12 12 12 13 13 15 20 20 20 20 21 22 Section 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. 2. 3. 3.1. 3.2. 3.3. 3.4. 3.4.1. 3.5. 3.6. 3.7. 4. 4.1. 4.2. 4.3. 4.4. 5. Title Introduction Features Marking Code Operating Junction Temperature Range Hall Sensor Package Codes Solderability and Welding Pin Connections Functional Description Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Characteristics Magnetic Characteristics Application Notes Ambient Temperature Extended Operating Conditions Start-up Behavior EMC and ESD Data Sheet History Micronas 3 HAL320 Differential Hall Effect Sensor IC in CMOS technology Release Notes: Revision bars indicate significant changes to the previous edition. 1. Introduction The HAL 320 is a differential Hall switch produced in CMOS technology. The sensor includes 2 temperaturecompensated Hall plates (2.25 mm apart) with active offset compensation, a differential amplifier with a Schmitt trigger, and an open-drain output transistor (see Fig. 2-1). The HAL 320 is a differential sensor which responds to spatial differences of the magnetic field. The Hall voltages at the two Hall plates, S1 and S2, are amplified with a differential amplifier. The differential signal is compared with the actual switching level of the internal Schmitt trigger. Accordingly, the output transistor is switched on or off. The sensor has a bipolar switching behavior and requires positive and negative values of B = BS1 - BS2 for correct operation. Basically, there are two ways to generate the differential signal B: - Rotating a multi-pole-ring in front of the branded side of the package (see Fig. 3-1, Fig. 3-2, and Fig. 3-3; Please use HAL 300 only). - Back-bias applications: A magnet on the back side of the package generates a back-bias field at both Hall plates. The differential signal B results from the magnetic modulation of the back-bias field by a rotating ferromagnetic target (Please use HAL 320 only). The active offset compensation leads to constant magnetic characteristics over supply voltage and temperature. The sensor is designed for industrial and automotive applications and operates with supply voltages from 4.5 V to 24 V in the ambient temperature range from -40 C up to 150 C. The HAL 320 is an ideal sensor for target wheel applications, ignition timing, anti-lock brake systems, and revolution counting in extreme automotive and industrial environments The HAL 320 is available in the SMD-package SOT89B-2 and in the leaded versions TO92UA-3 and TO92UA-4. 1.1. Features: DATA SHEET - distance between Hall plates: 2.25 mm - operates from 4.5 V to 24 V supply voltage - switching offset compensation at 62 kHz - overvoltage protection - reverse-voltage protection at VDD-pin - short-circuit protected open-drain output by thermal shutdown - operates with magnetic fields from DC to 10 kHz - output turns low with magnetic south pole on branded side of package and with a higher magnetic flux density in sensitive area S1 as in S2 - on-chip temperature compensation circuitry minimizes shifts of the magnetic parameters over temperature and supply voltage range - the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of hysteresis - EMC corresponding to ISO 7637 1.2. Marking Code All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. 1.3. Operating Junction Temperature Range (TJ) The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). The HAL 320 is available in the temperature range "A" only. A: TJ = -40 C to +170 C The relationship between ambient temperature (TA) and junction temperature (TJ) is explained in section 4.1. on page 20. 4 Micronas DATA SHEET HAL320 1.4. Hall Sensor Package Codes HALXXXPA-T Temperature Range: A Package: SF for SOT89B-2, UA for TO92UA Type: 320 Example: HAL320UA-A Type: 320 Package: TO92UA Temperature Range: TJ = -40 C to +170 C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: "Hall Sensors: Ordering Codes, Packaging, Handling". 1.5. Solderability and Welding Soldering During soldering reflow processing and manual reworking, a component body temperature of 260 C should not be exceeded. Welding Device terminals should be compatible with laser and resistance welding. Please note that the success of the welding process is subject to different welding parameters which will vary according to the welding technique used. A very close control of the welding parameters is absolutely necessary in order to reach satisfying results. Micronas, therefore, does not give any implied or express warranty as to the ability to weld the component. 1.6. Pin Connections VDD 1 OUT 3 2 GND Fig. 1-1: Pin configuration Micronas 5 HAL320 2. Functional Description This Hall effect sensor is a monolithic integrated circuit with 2 Hall plates 2.25 mm apart that switches in response to differential magnetic fields. If magnetic fields with flux lines perpendicular to the sensitive areas are applied to the sensor, the biased Hall plates force Hall voltages proportional to these fields. The difference of the Hall voltages is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the differential magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. The builtin hysteresis eliminates oscillation and provides switching behavior of the output without oscillation. Magnetic offset caused by mechanical stress at the Hall plates is compensated for by using the "switching offset compensation technique": An internal oscillator provides a two phase clock (see Fig. 2-2). The difference of the Hall voltages is sampled at the end of the first phase. At the end of the second phase, both sampled differential Hall voltages are averaged and compared with the actual switching point. Subsequently, the open drain output switches to the appropriate state. The amount of time that elapses from crossing the magnetic switch level to the actual switching of the output can vary between zero and 1/fosc. Shunt protection devices clamp voltage peaks at the Output-Pin and VDD-Pin together with external series resistors. Reverse current is limited at the VDD-Pin by an internal series resistor up to -15 V. No external reverse protection diode is needed at the VDD-Pin for values ranging from 0 V to -15 V. VDD 1 Reverse Voltage & Overvoltage Protection Hall Plate S1 Switch Hall Plate S2 DATA SHEET HAL320 Temperature Dependent Bias Hysteresis Control Short Circuit & Overvoltage Protection Comparator Output OUT 3 Clock GND 2 Fig. 2-1: HAL320 block diagram fosc t DB DBON t VOUT VOH VOL t IDD 1/fosc = 16 s tf t Fig. 2-2: Timing diagram 6 Micronas DATA SHEET HAL320 3. Specifications 3.1. Outline Dimensions Fig. 3-1: SOT89B-2: Plastic Small Outline Transistor package, 4 leads, with two sensitive areas Weight approximately 0.034 g Micronas 7 HAL320 DATA SHEET Fig. 3-2: TO92UA-4: Plastic Transistor Standard UA package, 3 leads, not spread, with two sensitive areas Weight approximately 0.106 g 8 Micronas DATA SHEET HAL320 Fig. 3-3: TO92UA-3: Plastic Transistor Standard UA package, 3 leads, spread, with two sensitive areas Weight approximately 0.106 g Micronas 9 HAL320 DATA SHEET Fig. 3-4: TO92UA-4: Dimensions ammopack inline, not spread 10 Micronas DATA SHEET HAL320 Fig. 3-5: TO92UA-3: Dimensions ammopack inline, spread Micronas 11 HAL320 3.2. Dimensions of Sensitive Area 0.08 mm x 0.17 mm 3.3. Positions of Sensitive Areas (nominal values) SOT89B-2 TO92UA-3/-4 x1 = -1.125 mm x2 = 1.125 mm x1 - x2 = 2.25 mm y = 0.95 mm y = 1.0 mm Bd = 0.2 mm DATA SHEET 3.4. Absolute Maximum Ratings Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this high-impedance circuit. All voltages listed are referenced to ground (GND). Symbol VDD VO IO TJ 1) as long as 2) t < 1000h Parameter Supply Voltage Output Voltage Continuous Output On Current Junction Temperature Range TJmax is not exceeded Pin No. 1 3 3 Min. -15 -0.3 - -40 -40 Max. 281) 281) 30 150 1702) Unit V V mA C 3.4.1. Storage and Shelf Life The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. 12 Micronas DATA SHEET HAL320 3.5. Recommended Operating Conditions Functional operation of the device beyond those indicated in the "Recommended Operating Conditions" of this specification is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime. All voltages listed are referenced to ground (GND). Symbol VDD IO VO Parameter Supply Voltage Continuous Output On Current Output Voltage Pin No. 1 3 3 Min. 4.5 - - Max. 24 20 24 Unit V mA V 3.6. Characteristics at TJ = -40 C to +170 C , VDD = 4.5 V to 24 V, GND = 0 V at Recommended Operation Conditions if not otherwise specified in the column "Conditions". Typical Characteristics for TJ = 25 C and VDD = 12 V Symbol IDD IDD VDDZ VOZ VOL IOH fosc ten(O) Parameter Supply Current Supply Current over Temperature Range Overvoltage Protection at Supply Overvoltage Protection at Output Pin No. 1 1 Min. 2.8 1.8 Typ. 4.7 4.7 Max. 6.8 7.5 Unit mA mA IDD = 25 mA, TJ = 25 C, t = 20 ms IO = 25 mA, TJ = 25 C, t = 20 ms IO = 20 mA VOH = 4.5 V... 24 V, DB < DBOFF , TJ 150 C Conditions TJ = 25 C 1 - 28.5 32.5 V 3 - 28 32.5 V Output Voltage over Temperature Range Output Leakage Current over Temperature Range Internal Oscillator Chopper Frequency Enable Time of Output after Setting of VDD 3 - 180 400 mV A 3 - 0.06 10 - - 62 - kHz s 3 - 35 - VDD = 12 V, DB > DBON + 2mT or DB < DBOFF - 2mT VDD = 12 V, RL = 820 , CL = 20 pF VDD = 12 V, RL = 820 , CL = 20 pF Fiberglass Substrate 30 mm x 10 mm x 1.5 mm (see Fig. 3-6) tr tf RthJSB case SOT89B-2 RthJS case TO92UA-3, TO92UA-4 Output Rise Time 3 - 80 400 ns Output Fall Time 3 - 45 400 ns Thermal Resistance Junction to Substrate Backside - 150 200 K/W Thermal Resistance Junction to Soldering Point - 150 200 K/W Micronas 13 HAL320 DATA SHEET 1.80 1.05 1.45 2.90 1.05 0.50 1.50 Fig. 3-6: Recommended footprint SOT89B, Dimensions in mm Note: All dimensions are for reference only. The pad size may vary depending on the requirements of the soldering process. 14 Micronas DATA SHEET HAL320 3.7. Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 4.5 V to 24 V Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points (Condition: -10 mT < B0 < 10 mT) Positive flux density values refer to the magnetic south pole at the branded side ot the package. B = BS1 - BS2 Parameter Min. On point BON B > BON Off point BOFF B < BOFF Hysteresis BHYS = BON - BOFF Offset BOFFSET = (BON + BOFF)/2 -1.5 -40 C Typ. 1.2 Max. 2.5 Min. -1.5 25 C Typ. 1.2 Max. 2.5 Min. -2.5 170 C Typ. 1.1 Max. 3.5 mT Unit -2.5 -0.6 1.5 -2.5 -0.6 1.5 -3.5 -0.4 2.5 mT 1 1.8 4 1 1.8 4 0.8 1.5 4 mT -2 0.3 2 -2 0.3 2 -3 0.4 3 mT In back-biased applications, sensitivity mismatch between the two Hall plates S1 and S2 can lead to an additional offset of the magnetic switching points. In back-biased applications with the magnetic preinduction B0, this sensitivity mismatch generates the magnetic offset BOFFSETbb = |S1 - S2|/S1 @ B0 + BOFFSET. Parameter Sensitivity mismatch1) 1) 2) -40 C |S1 - S2|/S1 1.52) 25 C 1.02) 170 C 0.52) Unit % Mechanical stress from packaging can influence sensitivity mismatch. All values are typical values. The magnetic switching points are checked at room temperature at a magnetic preinduction of B0 = 150 mT. These magnetic parameters may change under external pressure and during the lifetime of the sensor. Parameter Min. On point BONbb Off point BOFFbb Hysteresis BHYS Offset BOFFSETbb -4.5 -5.5 1 -5 25 C Typ. 1.5 -0.3 1.8 0.6 Max. 5.5 4.5 4 +5 mT mT mT mT Unit VOH Output Voltage VOL DBOFF min DBOFF 0 DBHYS DBON DBON max B = BS1 - BS2 Fig. 3-7: Definition of switching points and hysteresis Micronas 15 HAL320 DATA SHEET mT 2.0 1.5 BON 1.0 0.5 0.0 -0.5 -1.0 BOFF -1.5 -2 mT 2.0 VDD = 12 V BON 1.5 BOFF 1.0 0.5 0.0 -0.5 -1.0 -1.5 -2 -50 BON BOFF TA = -40 C TA = 25 C TA = 100 C TA = 150 C 0 5 10 15 20 25 VDD 30 V 0 50 100 150 TA 200 C Fig. 3-8: Magnetic switch points versus supply voltage Fig. 3-10: Magnetic switch points versus temperature mT 2.0 1.5 BON 1.0 0.5 0.0 -0.5 -1.0 -1.5 -2 BOFF IDD mA 25 20 TA = -40 C 15 10 5 0 -5 -10 -15 -15 -10 -5 TA = 25 C TA = 150 C TA = -40 C TA = 25 C TA = 100 C TA = 170 C BON BOFF 3 3.5 4.0 4.5 5.0 5.5 VDD 6.0 V 0 5 10 15 20 25 30 V VDD Fig. 3-9: Magnetic switch points versus supply voltage Fig. 3-11: Typical supply current versus supply voltage 16 Micronas DATA SHEET HAL320 mA 8 7 IDD 6 TA = -40 C 5 TA = 25 C 4 3 2 TA = 150 C mV 500 IO = 20 mA VOL 400 300 TA = 150 C 200 TA = 25 C TA = -40 C 100 1 0 0 1 2 3 4 5 VDD 6V 0 5 10 15 20 25 VDD 30 V Fig. 3-12: Supply current versus supply voltage Fig. 3-14: Typical output low voltage versus supply voltage mA 8 7 IDD 6 5 mV 500 IO = 20 mA VOL 400 VDD = 4.5 V 300 4 3 2 VDD = 12 V VDD = 24 V VDD = 4.5 V 200 100 1 0 -50 0 50 100 150 TA 200 C 0 -50 0 50 100 150 TA 200 C Fig. 3-13: Supply current versus ambient temperature Fig. 3-15: Typical output low voltage versus ambient temperature Micronas 17 HAL320 DATA SHEET kHz 70 TA = 25 C fosc 50 kHz 70 VDD = 12 V 60 fosc 60 50 40 40 30 30 20 20 10 10 0 0 5 10 15 20 25 VDD 30 V 0 -50 0 50 100 150 TA 200 C Fig. 3-16: Typical internal chopper frequency versus supply voltage Fig. 3-18: Typical internal chopper frequency versus ambient temperature kHz 70 TA = 25 C IOH 50 A 2 10 1 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -50 VOH = 24 V VDD = 5 V 60 fosc 40 30 20 10 0 3 3.5 4.0 4.5 5.0 5.5 VDD 6.0 V 0 50 100 150 TA 200 C Fig. 3-17: Typical internal chopper frequency versus supply voltage Fig. 3-19: Typical output leakage current versus ambient temperature 18 Micronas DATA SHEET HAL320 A 2 10 1 10 0 10 VDD = 5 V IOH TA = 125 C -1 10 -2 10 TA = 75 C -3 10 -4 10 -5 10 20 TA = 25 C 22 24 26 28 VOH 30 V Fig. 3-20: Typical output leakage current versus output voltage Micronas 19 HAL320 4. Application Notes Mechanical stress can change the sensitivity of the Hall plates and an offset of the magnetic switching points may result. External mechanical stress on the sensor must be avoided if the sensor is used under back-biased conditions. This piezo sensitivity of the sensor IC cannot be completely compensated for by the switching offset compensation technique. In order to assure switching the sensor on and off in a back-biased application, the minimum magnetic modulation of the differential field should amount to more than 10% of the magnetic preinduction. If the HAL 320 sensor IC is used in back-biased applications, please contact our Application Department. They will provide assistance in avoiding applications which may induce stress to the ICs. This stress may cause drifts of the magnetic parameters indicated in this data sheet. 4.1. Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). TJ = TA + T Under static conditions and continuous operation, the following equation applies: T = IDD * VDD * Rth For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: TAmax = TJmax - T 4.2. Extended Operating Conditions DATA SHEET All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 13). Supply Voltage Below 4.5 V Typically, the sensors operate with supply voltages above 3 V, however, below 4.5 V some characteristics may be outside the specification. Note: The functionality of the sensor below 4.5 V is not tested on a regular base. For special test conditions, please contact Micronas. 4.3. Start-up Behavior Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in the Electrical Characteristics (see page 13). During the initialization time, the output state is not defined and the output can toggle. After ten(O), the output will be low if the applied magnetic field B is above BON. The output will be high if B is below BOFF. For magnetic fields between BOFF and BON, the output state of the HAL sensor after applying VDD will be either low or high. In order to achieve a well-defined output state, the applied magnetic field must be above BONmax, respectively, below BOFFmin. 20 Micronas DATA SHEET HAL320 4.4. EMC and ESD For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see Fig. 4-1). The series resistor and the capacitor should be placed as closely as possible to the HAL sensor. Applications with this arrangement passed the EMC tests according to the product standard ISO 7637. Please contact Micronas for the detailed investigation reports with the EMC and ESD results. RV 220 1 VEMC VP 4.7 nF 2 GND VDD OUT 3 20 pF RL 1.2 k Fig. 4-1: Test circuit for EMC investigations Micronas 21 HAL320 5. Data Sheet History 1. Final data sheet: "HAL 320 Differential Hall Effect Sensor IC", July 15, 1998, 6251-439-1DS. First release of the final data sheet. 2. Final data sheet: "HAL 320 Differential Hall Effect Sensor IC", Oct. 19, 2004, 6251-439-2DS. Second release of the final data sheet. Major changes: - temperature ranges "C" and "E" removed - new package diagrams for SOT89B-2 and TO92UA-4 - package diagram for TO92UA-3 added - ammopack diagrams for TO92UA-3/-4 added - new diagram for SOT89B footprint 3. Final data sheet: "HAL 320 Differential Hall Effect Sensor IC", Nov. 25, 2008, DSH000017_002. Third release of the final data sheet. Major changes: - Section 1.5. "Solderability and Welding" updated - package diagrams updated DATA SHEET Micronas GmbH Hans-Bunte-Strasse 19 * D-79108 Freiburg * P.O. Box 840 * D-79008 Freiburg, Germany Tel. +49-761-517-0 * Fax +49-761-517-2174 * E-mail: docservice@micronas.com * Internet: www.micronas.com 22 Micronas |
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